PART |
Description |
Maker |
MX29F200BMC-70 MX29F200TTC-70 MX29F200TTI-90 MX29F |
2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
|
MCNIX[Macronix International]
|
AM29F200B AM29F200BT-120SC |
2 Mbit (256 K x 8-Bit/128 K x 16-Bit) EEPROM,FLASH,128KX16/256KX8,CMOS,SOP,44PIN,PLASTIC From old datasheet system
|
AMD Inc
|
N02L83W2A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx8 bit
|
ON Semiconductor
|
K6T2008U2A K6T2008U2A-B K6T2008U2A-F K6T2008U2A-FF |
256Kx8 bit Low Power and Low Voltage CMOS Static RAM
|
Samsung semiconductor
|
KM68U2000 KM68V2000 |
256Kx8 bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低电压CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM68U2000A |
256Kx8 bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低电压CMOS 静RAM) 256Kx8位低功耗和低电压的CMOS静态RAM56K × 8位低功耗和低电压的CMOS静态RAM)的
|
Samsung Semiconductor Co., Ltd.
|
K6F2008U2E-YF70 DS_K6F2008U2E K6F2008U2E-EF55 K6F2 |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM 256Kx8位超低功耗和低电压的CMOS静态RAM 256K X 8 STANDARD SRAM, 55 ns, PBGA36
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
BS616UV2019 BS616UV2019TIP85 BS616UV2019AC BS616UV |
Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit 超低功率/电压CMOS SRAM28K的16 020419-0023 超低功率/电压CMOS SRAM28K的16 Hex Buffer/Driver With Open-Drain Outputs 14-SOIC -40 to 85 JT 55C 55#20 SKT PLUG Asynchronous 2M(128Kx16) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
|
BS616LV2017 BS616LV2017EIP70 BS616LV2017AC BS616LV |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit Very Low Power/Voltage CMOS SRAM 128K X 16 bit 非常低功电压CMOS SRAM28K的16 FF-SR2 Series, Two-hand Control, 24 Vdc 非常低功电压CMOS SRAM28K的16 LM49370 Audio Sub-System with an Ultra Low EMI, Spread Spectrum, Class D Loudspeaker Amplifier, a Dual-Mode Stereo Headphone Amplifier, and a Dedicated PCM Interface for Bluetooth Transceivers Marine Lamp, 4 in x 6 in [101,6 mm x 152,4 mm], Wide Flood Beam Pattern, 12 Vdc/50 W/4 A, Flush mounting Asynchronous 2M(128Kx16) bits Static RAM
|
Brilliance Semiconducto... Honeywell International, Inc. BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
|
IC62VV12816LL IC62VV12816L IC62VV12816L-70B IC62VV |
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM 128Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM 70ns; 1.8V; 128K x 16 ultra low power CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
EDI88257C EDI88257C/LP-C EDI88256C70CC EDI88256C70 |
70ns; 5V power supply; 256K x 18 monolithic SRAM 60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-HMSOP T&R 256Kx8 Monolithic SRAM(256Kx8 CMOS单片静态RAM(存取时0500ns
|
White Electronic Designs Corporation
|